Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3114464
Keywords
cadmium compounds; carrier mobility; excitons; friction; II-VI semiconductors; nanostructured materials; red shift; semiconductor heterojunctions; wide band gap semiconductors; zinc compounds
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Funding
- Bowling Green State University [SF07, RIC2008, RCE2008]
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The effect of dielectric friction on the rate of charge separation in type II ZnSe/CdS semiconductor nanorods has been investigated using picosecond transient absorption spectroscopy. The spatial separation of an excited electron-hole pair was estimated from the redshift in band edge absorption corresponding to the decrease in the exciton binding energy. The present study identifies a considerable effect of the solvent polarity on the rate of charge separation in semiconductor heterostructures, which should be taken into account when selecting nanorod caging media, such as solvents or polymer matrices.
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