Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3114993
Keywords
bismuth compounds; dysprosium compounds; electronegativity; insulating thin films; interface structure; strontium compounds; vacancies (crystal)
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Funding
- Japan Society for the Promotion of Science (JSPS) in Tsukuba University
- Lawrence Berkeley National Laboratory
- University of California-Berkeley
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(001)-oriented BiFeO3 and SrRuO3 films were deposited on SrTiO3 and DyScO3 substrates to study oxygen-vacancy density as a function of cooling oxygen pressure. During cooling of as-grown samples at <= 0.01 Torr oxygen pressure, SrRuO3 films decompose, BiFeO3 films can accommodate a significant fraction of oxygen vacancies, SrTiO3 substrates acts as a sink for vacancies, and DyScO3 substrates remaining largely unaffected by oxygen vacancies. These phenomena can be explained according to the electronegativity of the different B-site atoms, because changes in B-site ion valence play a key role in maintaining charge equilibrium during oxygen vacancy production in many ABO(3)-type oxides.
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