Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3130092
Keywords
cobalt alloys; ferromagnetic materials; gallium arsenide; III-V semiconductors; iron alloys; magnetic anisotropy; magnetic epitaxial layers; semiconductor-metal boundaries; spin-orbit interactions; tunnelling magnetoresistance
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Funding
- MEXT, Japan [20246054, 19048001, 19560307]
- Grants-in-Aid for Scientific Research [19048001, 19560307, 20246054] Funding Source: KAKEN
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Magnetic and transport properties of a fully epitaxial CoFe/n-GaAs junction were investigated. The CoFe film grown on the GaAs showed strong magnetic anisotropy in which uniaxial anisotropy with an easy axis of [110] dominated with a slight cubic anisotropy having easy axes of [110] and [1100] superimposed. Tunneling anisotropic magnetoresistance (TAMR) was observed at 4.2 K in the CoFe/n-GaAs junction. Angular dependence of the tunnel resistance showed uniaxial-type anisotropic tunnel resistance between the [110] and [110] directions in the (001) plane that varied strongly with a bias voltage. The observed TAMR effect can be explained by the anisotropic electronic structure due to Rashba and Dresselhaus spin-orbit interactions.
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