Metal-ferroelectric (BiFeO3)-insulator (Y2O3)-semiconductor capacitors and field effect transistors for nonvolatile memory applications

Metal-ferroelectric-insulator-semiconductor capacitors and field effect transistors with Al/BiFeO3/Y2O3/Si structure were fabricated and characterized for nonvolatile memory applications. The capacitance-voltage curves exhibit a maximum clockwise memory window of 0.92 V. The minimum leakage current density is 2x10(-7) A/cm(2) at an applied voltage of 5 V. The capacitance-voltage memory window as a function of the sweep voltage range was investigated. The I-DS-V-GS curves of metal-ferroelectric-insulator-semiconductor transistors show a maximum memory window of 0.84 V. The drain current on/off ratio maintained more than three orders of magnitude after an elapsed time of 10(4) s.