Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3222867
Keywords
annealing; carrier density; doping profiles; ferromagnetic materials; indium compounds; magnetisation; materials preparation; semimagnetic semiconductors; tin compounds; vacancies (crystal)
Categories
Funding
- Nanyang Technological University
- Singapore A*star SERC [062 101 0030]
- Singapore Ministry of Education (MOE) Tier 1 [RG59/06]
- Singapore MOE Tier 2 [T207B1217]
Ask authors/readers for more resources
Four bulk polycrystalline (In0.85-xSnxFe0.15)(2)O-3 samples with x=0, 0.01, 0.03, and 0.05 were synthesized, where carrier concentration n was controlled by varying Sn doping concentration x. Strong room temperature ferromagnetism was observed. A systematic characterization and analysis of structure, purity, magnetic, and transport properties indicates that ferromagnetism is due to neither impurities nor charge carriers. The four samples were annealed in air and high vacuum alternately. The ferromagnetism signal disappears and appears accordingly. Based on these results, we conclude that room temperature ferromagnetism in (In0.85-xSnxFe0.15)(2)O-3 system is closely and directly related to oxygen vacancies in the samples.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
