Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3116088
Keywords
bismuth compounds; buffer layers; dielectric thin films; dysprosium compounds; MFIS structures; multiferroics; random-access storage
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Funding
- DOD [W911NF-05-1-0340, W911NF-06-1-0030, W911NF-06-1-0183]
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Metal-ferroelectric-insulator-semiconductor structures with a BiFeO3 ferroelectric layer and DyScO3 insulating buffer layer were fabricated and characterized. BiFeO3 film was polycrystalline with rhombohedral structure and DyScO3 film was amorphous. The size of the capacitance-voltage memory window (Delta V-FB) was investigated as a function of voltage sweep and frequency; Delta V-FB increased to a saturation value of 1.7 V with the sweep voltage and it almost remained constant over a frequency range of 1 kHz to 1 MHz.
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