Room temperature photocurrent response of PbS/InP heterojunction

We report on the observation of photocurrent response of a PbS/InP heterojunction. The PbS/InP heterostructure is synthesized via aqueous solution-based heteroepitaxial growth, and is fabricated into a photodetector. At zero bias, two photoresponse bands between 0.75 and 3.1 mu m are measured at room temperature, which correspond to interband photocarrier generations in PbS and InP, respectively. An anomalous polarity of the photocurrent is observed and its possible origins are analyzed. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3271526]