Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 20, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3139778
Keywords
IV-VI semiconductors; lead compounds; surface emitting lasers
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A midinfrared vertical external cavity surface emitting laser with 4.5 mu m emission wavelength and operating above room temperature has been realized. The active part consists of a single 850 nm thick epitaxial PbSe gain layer. It is followed by a 2 1/2 pair Pb1-yEuyTe/BaF2 Bragg mirror. No microstructural processing is needed. Excitation is done optically with a 1.5 mu m wavelength laser. The device operates up to 45 degrees C with 100 ns pulses and delivers 6 mW output power at 27 degrees C heat-sink temperature.
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