Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3126037
Keywords
chemical vapour deposition; doping profiles; epitaxial growth; gold; integrated optoelectronics; nanoelectronics; nanowires; p-n junctions; semiconductor diodes; semiconductor doping; silicon
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Funding
- KOSEF [2007-02864]
- MEST-AFOSR NBIT
- KRF Grant MOEHRD [KRF-2005-005-J13103]
- MEST/ KOSEF [R11-2008-105-01003-0]
- MEST [R31-2008-00010059-0]
- National Research Foundation of Korea [R11-2008-105-01003-0, 2007-02864] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate fabrication of vertically aligned, intrananowire p-n diodes by large-area epitaxial growth of Si nanowires (NWs). The axially modulated doping profile of p-n junctions is achieved by in situ doping with alternating addition of dopants in the axial sequence during Au-assisted chemical vapor deposition. We provide direct evidence of the intra-NW p-n junctions using scanning local probes in both individual NWs and vertically aligned NWs at large areas. Our study suggests implication for integrated electronics and optoelectronics based on bottom-up Si NWs.
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