Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3074366
Keywords
excitons; gallium compounds; III-V semiconductors; II-VI semiconductors; nanostructured materials; nanotechnology; photoluminescence; sapphire; semiconductor growth; wide band gap semiconductors; zinc compounds
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Funding
- KRF [KRF-2007521-D0019]
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The authors have employed variable temperature photoluminescence (PL) and time-resolved PL spectroscopy to probe the exciton recombination in high density and vertically aligned ZnO nanorods grown on p-type GaN/sapphire template. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays. At 4.3 K, a PL decay time of 432 ps reveals improved crystalline quality. The PL decay time shows irregular behavior due to different types of excitonic transitions dominating the PL spectra at different temperatures and a competitive effect of radiative recombination and nonradiative relaxation processes.
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