Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere

Published 2009 View Full Article

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Title
Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 2, Pages 023305
Publisher
AIP Publishing
Online
2009-01-17
DOI
10.1063/1.3072608
References
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