Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3073748
Keywords
carbon nanotubes; field effect transistors; gas sensors; nanopatterning; printing; Raman spectra; silicon compounds; thin film devices; nanofabrication
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Funding
- Korean Science and Engineering Foundation (KOSEF) [R01-2006-00010883-0]
- Seoul RBD Program [10550]
- KOSEF [R0A-2004-000-10438-0]
- KME
- National Research Foundation of Korea [R0A-2004-000-10438-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The aligned assembly of carbon nanotubes (CNTs) on substrate presents a significant bottleneck in the fabrication of high-performance thin film devices. Here, we report a direct printing method to prepare laterally aligned thick CNT patterns over large surface regions. In this method, CNT forests were grown selectively on specific regions of one substrate, and the forest patterns were transferred on another SiO(2) substrate in a laterally aligned formation while keeping their original shapes. The degree of alignment was characterized via electrical measurement and polarized Raman spectroscopy. Furthermore, we demonstrated high-performance field-effect transistors and gas sensors using our method.
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