Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates

Published 2009 View Full Article

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Title
Relaxation of strained pseudomorphic SixGe1−x layers on He-implanted Si/δ-Si:C/Si(100) substrates
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 95, Issue 14, Pages 144103
Publisher
AIP Publishing
Online
2009-10-07
DOI
10.1063/1.3240409
References
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