4.6 Article

Type I/type II band alignment transition in strained PbSe/PbEuSeTe multiquantum wells

Journal

APPLIED PHYSICS LETTERS
Volume 95, Issue 21, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3263722

Keywords

band structure; deformation; electronic structure; europium compounds; IV-VI semiconductors; lead compounds; selenium compounds; semiconductor heterojunctions; semiconductor quantum wells; tensile strength

Funding

  1. Austrian Science Fund (SFB-IRON)
  2. GME, Vienna
  3. Austrian Science Fund (FWF) [F 2504, F 2503] Funding Source: researchfish

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Investigation of the optical transitions in tensily strained PbSe/PbEuSeTe multiquantum wells by differential transmission spectroscopy reveals a type I/type II band alignment transition due to strain-induced lowering of the band edge energies of the quantum wells. From the measured shifts of the optical transitions the optical deformation potentials of PbSe are obtained. This is crucial for realistic modeling of the electronic properties of strained PbSe heterostructures.

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