Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3077614
Keywords
alumina; charge injection; elemental semiconductors; energy gap; gold; hafnium compounds; interface states; MIS structures; nanostructured materials; random-access storage; silicon
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Funding
- National Science Council of the Republic of China [NSC-96-2221-E-007-017]
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Charge storage characteristics of metal-oxide-semiconductor (MOS) structures containing Au nanocrystals on tunnel oxide composed of Al2O3/HfO2/Al2O3 stacks in different thickness piling up sequences were investigated. A significant enhancement of charge injection efficiency for both electrons and holes without sacrificing charge retention performance was found in the sample with a relatively thicker (similar to 3 nm) Al2O3 sublayer adjacent to Au nanocrystals and a thinner (similar to 1 nm) Al2O3 sublayer in front of the Si substrate. It is attributed to the local enhancement of electric field induced by the embedded Au nanocrystals, which greatly modifies the effective barrier of tunnel oxide.
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