Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3089361
Keywords
antiferromagnetic materials; commensurate-incommensurate transformations; dielectric polarisation; dielectric thin films; holmium compounds; magnetic structure; magnetic thin films; magnetic transitions; magnetisation; multiferroics; permittivity
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Funding
- National Science Council of R. O. C. [NSC96-2112-M-390-003MY3, NSC96-2112-M-002-027-MY3.]
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High quality orthorhombic (OT) HoMnO3 (HMO) thin films with a-axis perpendicular to the film surface are grown on SrTiO3(110) substrates with the method of pulsed laser deposition. The structural, magnetic, and dielectric properties of OT-HMO films are measured. The temperature-dependent magnetization clearly displays an antiferromagnetic ordering near 44 K. Following, the lock-in transition from incommensurate to commensurate antiferromagnetic state is observed at 26 K with the applied field parallel to a-axis. At the same temperature, the dielectric constant rises abruptly, prevailing a strong coupling between the magnetic structure and the electric polarization as predicted for the E-phase multiferroic compounds.
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