Fabrication of high-k/metal-gate MoS2field-effect transistor by device isolation process utilizing Ar-plasma etching

Published 2015 View Full Article

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Title
Fabrication of high-k/metal-gate MoS2field-effect transistor by device isolation process utilizing Ar-plasma etching
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 54, Issue 4, Pages 046502
Publisher
Japan Society of Applied Physics
Online
2015-03-20
DOI
10.7567/jjap.54.046502

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