Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3046783
Keywords
band structure; excitons; II-VI semiconductors; internal stresses; lattice constants; molecular beam epitaxial growth; photoluminescence; semiconductor quantum wells; surface morphology; wide band gap semiconductors; zinc compounds
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Funding
- ANR under the SUMO [ANR-05-NANO-071]
- ZOOM [ANR-06-BLAN-0135]
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We investigate the dependence on Mg content of the lattice parameters and the surface morphology of nonpolar a-(1120) Zn1-xMgxO (x <= 0.55) grown by molecular beam epitaxy. The anisotropy of the lattice parameters gives rise to an unusual in-plane strain state in the ZnO QWs: tensile strain along [1100] and compressive strain along [0001]. For a Zn0.6Mg0.4O barrier, the strain in a ZnO QW reaches -1.3% along [0001] and +0.3% along [1100]. This induces a strong blueshift of the excitonic transitions, in addition to the confinement effects, which we observe in photoluminescence excitation experiments.
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