Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2996580
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- Scientific Research on Priority Areas (B) [18360169]
- Grants-in-Aid for Scientific Research [18360169] Funding Source: KAKEN
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The origin and suppression of the subband parasitic peak in AlGaN deep ultraviolet light-emitting diodes have been studied. The parasitic peak is clarified to come from a p-AlGaN cladding layer and to be related to Mg dopants. By using 1 nm i-AlN as an interlayer between the active region and the p-AlGaN cladding layer, this peak is suppressed efficiently. The devices with such an interlayer show improved output power by a factor of 4 at injection current density of 20 A/cm(2), except that the series resistance and turn-on voltage are slightly increased. (C) 2008 American Institute of Physics.
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