Physical mechanisms of hydrogen-enhanced onset of epitaxial growth of silicon by plasma-enhanced chemical vapor deposition

Published 2008 View Full Article

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Title
Physical mechanisms of hydrogen-enhanced onset of epitaxial growth of silicon by plasma-enhanced chemical vapor deposition
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 6, Pages 061902
Publisher
AIP Publishing
Online
2008-08-12
DOI
10.1063/1.2957674
References
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