Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors

Published 2008 View Full Article

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Title
Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 3, Pages 032110
Publisher
AIP Publishing
Online
2008-07-25
DOI
10.1063/1.2961120
References
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