Analysis of V defects in GaN-based light emitting diodes by scanning transmission electron microscopy and electron beam induced current

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Analysis of V defects in GaN-based light emitting diodes by scanning transmission electron microscopy and electron beam induced current
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 24, Pages 242103
Publisher
AIP Publishing
Online
2008-06-24
DOI
10.1063/1.2945232

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.