Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors

Title
Comparison of the effects of Ar and H2 plasmas on the performance of homojunctioned amorphous indium gallium zinc oxide thin film transistors
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 20, Pages 203506
Publisher
AIP Publishing
Online
2008-11-19
DOI
10.1063/1.3028340

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started