Article
Engineering, Electrical & Electronic
Deepa Bhatt, Siddhartha Panda
Summary: The study focused on pH sensing of double-gate ion-sensitive field-effect transistors with hafnium oxide and a stack of hafnium oxide/yttrium oxide, resulting in high pH sensitivity. Diffusion of hafnium and yttrium into gallium was identified as a key factor in improving the sensitivity of the pH sensor.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Biochemistry & Molecular Biology
Tae-Hwan Hyun, Won-Ju Cho
Summary: This article presents the development of a high-performance potasium-selective biosensor platform based on an amorphous indium gallium zinc oxide thin-film transistor. The sensor exhibits high sensitivity and selectivity for potassium detection, making it applicable for high-performance potassium detection.æ
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
(2023)
Article
Biochemistry & Molecular Biology
Wei-Sheng Liu, Chih-Hao Hsu, Yu Jiang, Yi-Chun Lai, Hsing-Chun Kuo
Summary: In this study, high-performance indium-gallium-zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). The research found that increasing the O-2 ratio in the argon-oxygen plasma treatment mixture reduced surface roughness and improved thin-film resistivity and carrier Hall mobility. X-ray photoelectron spectroscopy measurements confirmed the decrease in carrier concentration due to the oxygen vacancy density reduction. The DG IGZO TFT devices showed enhanced characteristics after RTA, with improved field-effect mobility, subthreshold swing, and I-ON/I-OFF current ratio.
Article
Engineering, Electrical & Electronic
Junyeong Kim, Yuanfeng Chen, Suhui Lee, Jin Jang
Summary: A novel gate driver integrated by LTPO thin-film TFTs is reported, operating at high speed and effectively addressing the issue of ripples caused by negative threshold voltage of a-IGZO TFTs.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Materials Science, Multidisciplinary
Kalyan Mondol, Mehedi Hasan, Abdul Hasib Siddique, Sharnali Islam
Summary: In this work, the effects of changing device parameters on n-type double gate silicon tunneling field effect transistor (TFET) are investigated. Multiple parameters are considered to evaluate the device's performance. It is found that short channel length, high gate dielectric material, and effective mass equal to or more than 0.04 mo show promising performance.
RESULTS IN PHYSICS
(2022)
Article
Chemistry, Physical
Si Hyung Lee, Sueon Lee, Seong Cheol Jang, Nuri On, Hyun-Suk Kim, Jae Kyeong Jeong
Summary: This study demonstrates the effects of a metal capping layer on indium-gallium oxide films and associated TFTs. By introducing a Ta metal capping layer and annealing process, the IGO TFTs show significantly improved field-effect mobility due to reduced defects and electron injection from the metal capping layer during the crystallization process. Molecular dynamics calculations reveal that oxygen atoms near the interface region are attracted to the Ta capping layer, leading to superior performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Physical
Wengao Pan, Yunping Wang, Yanxin Wang, Zhihe Xia, Fion Sze Yan Yeung, Man Wong, Hoi Sing Kwok, Xinwei Wang, Shengdong Zhang, Lei Lu
Summary: In this work, the multiple effects of hydrogen (H) doping on amorphous InGaZnO (IGZO) TFTs were investigated. The H content influenced the electrical performances of the TFTs, acting as a defect suppressor, donor defect, transition state, and finally an acceptor defect. The oxygen vacancy (Vo) in IGZO determined the diffusion channel of the H dopant and its concentration. Additionally, fluorine (F) doping improved the hydrogen resistibility of IGZO.
JOURNAL OF ALLOYS AND COMPOUNDS
(2023)
Article
Multidisciplinary Sciences
Alexander Cerjan, Christina Jorg, Sachin Vaidya, Shyam Augustine, Wladimir A. Benalcazar, Chia Wei Hsu, Georg von Freymann, Mikael C. Rechtsman
Summary: By microprinting a three-dimensional photonic crystal structure using two-photon polymerization, the limitation of symmetry-protected bound states in the continuum (BICs) to single-frequency applications can be overcome. This concept substantially expands the design freedom available for developing next-generation devices with high-Q states by protecting a line of BICs in a symmetry bandgap of the crystal.
Article
Nanoscience & Nanotechnology
Min Hoe Cho, Cheol Hee Choi, Jae Kyeong Jeong
Summary: Amorphous indium-gallium-zinc oxide (a-IGZO) has become a standard channel ingredient of switching/driving transistors in active-matrix organic light- emitting diode (AMOLED) televisions. However, mobile AMOLED displays with a high pixel density and good form factor do not often employ a-IGZO transistors due to their modest mobility. This study investigates the use of all-oxide thin-film transistors (TFTs) with heterojunction stacks using atomic layer deposition (ALD) method as an alternative to a-IGZO transistors. The results show that the designed heterojunction stacks can achieve excellent electrical performance and stability, suggesting the feasibility of high-performance ALD-derived oxide TFTs for high-end mobile AMOLED displays.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Pharmacology & Pharmacy
Yongsheng Liu, Shengze Yu, Tianqi Xu, Vitalina Bodenko, Anna Orlova, Maryam Oroujeni, Sara S. Rinne, Vladimir Tolmachev, Anzhelika Vorobyeva, Torbjorn Graslund
Summary: This study evaluated the use of Ga-68 and In-111-labeled affibody construct NODAGA-(HE)(3)-Z(IGF-1R:4551) for the imaging of IGF-1R expression using PET and SPECT techniques. The results showed that these imaging probes could specifically bind to IGF-1R both in vitro and in vivo, demonstrating their potential for visualizing IGF-1R expression in malignant tumors.
Article
Nanoscience & Nanotechnology
Wanyu Zeng, Zengchong Peng, Dong Lin, Anna A. Guliakova, Qun Zhang, Guodong Zhu
Summary: This study reports a dual-mode proximity sensor based on an oxide thin-film transistor(TFT) that utilizes a tungsten carrier suppresser to develop semiconducting materials and devices. The sensor performs well in flat panel display applications and can also sense the proximity and angle of approach of charged objects.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Polymer Science
Rixuan Wang, Joonjung Lee, Jisu Hong, Hyeok-jin Kwon, Heqing Ye, Juhyun Park, Chan Eon Park, Joon Ho Kim, Hyun Ho Choi, Kyuyoung Eom, Se Hyun Kim
Summary: Polyimides (PIs) are versatile materials with industrial application value and are ideal for preparing high-performance functional materials such as PI thin films. OFETs fabricated using PI layer show stable electrical performance and can be used for integrated circuit manufacturing.
Article
Materials Science, Multidisciplinary
Jae-Yun Lee, Gergely Tarsoly, Suchang Yoo, Fei Shan, Heung Gyoon Ryu, Seungkeun Choi, Yong Jin Jeong, Sung-Jin Kim
Summary: This study focuses on fabricating transistors using high electron mobility a-IGZO semiconductor in transparent electronics, and discusses how optimizing layer structure can improve device performance, especially in reducing hysteresis and enhancing device reproducibility.
Article
Materials Science, Multidisciplinary
Xin Chen, Jianlong Ji, Yubo Peng, Zhipeng Gao, Min Zhao, Bin Tang, Ying Liu
Summary: Organic electrochemical transistors (OECTs) with advantages in miniaturization, simple device structure, and fast response are an emerging platform for developing wearable pH sensors for real-time human health monitoring. However, their application is limited due to the use of water electrolytes. This paper proposed a feasible pH-sensitive OECT with a flexible BTB dye-embedded ion-gel dielectric layer. The experimental results showed that the pH-sensitive OECT integrated with a 15 wt% BTB ion-gel layer exhibited outstanding H+ ion sensitivity and linear response properties at a gate voltage of -0.4 V. The pH-sensitive ion-gel modified OECT presents a novel strategy for developing wearable pH sensors with high real-time monitoring characteristics.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Nanoscience & Nanotechnology
Michael Geiger, Robin Lingstaedt, Tobias Wollandt, Julia Deuschle, Ute Zschieschang, Florian Letzkus, Joachim N. Burghartz, Peter A. van Aken, R. Thomas Weitz, Hagen Klauk
Summary: The study investigates the use of plasma-assisted oxidation of vacuum-deposited titanium gate electrodes to produce titanium oxide, which is used as the first component of a hybrid TiOx/SAM gate dielectric in flexible organic TFTs. These transistors demonstrate a gate-dielectric capacitance of approximately 1 mu F cm(-2), a subthreshold swing of 59 mV decade(-1) (close to the physical limit at room temperature within measurement error), and an on/off current ratio of 10(7) for a gate-source-voltage range of 1V even at channel lengths as small as 0.7 mu m.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Nicholas Blumenschein, Tania Paskova, John F. Muth
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2019)
Article
Physics, Condensed Matter
Dat Q. Tran, Nicholas Blumenschein, Alyssa Mock, Pitsiri Sukkaew, Hengfang Zhang, John F. Muth, Tania Paskova, Plamen P. Paskov, Vanya Darakchieva
PHYSICA B-CONDENSED MATTER
(2020)
Article
Energy & Fuels
Yasaman Sargolzaeiaval, Viswanath Padmanabhan Ramesh, Taylor Neumann, Veena Misra, Daryoosh Vashaee, Michael D. Dickey, Mehmet C. Ozturk
Article
Engineering, Electrical & Electronic
Faisal Azam, Akhilesh Tanneeru, Bongmook Lee, Veena Misra
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Engineering, Electrical & Electronic
Nicholas A. Blumenschein, Neil A. Moser, Eric R. Heller, Nicholas C. Miller, Andrew J. Green, Andreas Popp, Antonio Crespo, Kevin Leedy, Miles Lindquist, Taylor Moule, Stefano Dalcanale, Elisha Mercado, Manikant Singh, James W. Pomeroy, Martin Kuball, Gunter Wagner, Tania Paskova, John F. Muth, Kelson D. Chabak, Gregg H. Jessen
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2020)
Article
Physics, Applied
Nick Blumenschein, Christelle Kadlec, Oleksandr Romanyuk, Tania Paskova, John F. Muth, Filip Kadlec
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Physics, Applied
Dat Q. Tran, Rosalia Delgado-Carrasco, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen P. Paskov
APPLIED PHYSICS LETTERS
(2020)
Correction
Physics, Applied
Dat Q. Tran, Rosalia Delgado-Carrascon, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen P. Paskov
APPLIED PHYSICS LETTERS
(2021)
Correction
Physics, Applied
Dat Q. Tran, Rosalia Delgado-Carrascon, John F. Muth, Tania Paskova, Muhammad Nawaz, Vanya Darakchieva, Plamen P. Paskov
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Yilu Zhou, Farzad Mohaddes, Courtney Lee, Smriti Rao, Amanda C. Mills, Adam C. Curry, Bongmook Lee, Veena Misra
Summary: This article presents a high-performing wearable ECG armband with miniaturized hardware and data storage and wireless communication capabilities. It evaluates different electrode configurations and proposes an improved design of an electronic textile armband. The system provides real-time and noise-resilient ECG data without interrupting daily life and can be implemented in use cases that require continuous ECG monitoring.
IEEE SENSORS JOURNAL
(2022)
Proceedings Paper
Engineering, Multidisciplinary
Emran K. Ashik, Sundar B. Isukapati, Hua Zhang, Tianshi Liu, Utsav Gupta, Adam J. Morgan, Veena Misra, Woongje Sung, Ayman Fayed, Anant K. Agarwal, Bongmook Lee
Summary: The reliability of n- and p-MOSFETs on 4H-SiC was studied under different gate oxide conditions. The results show that the threshold voltage shift for n-MOSFET is less than 0.5V after 10(5)s at +25V, while p-MOSFET shows a larger shift of -1.9V after 10(5)s at -25V and 150 degrees C for ultrathin + thick CVD oxide. It was also found that the reliability of p-MOSFETs improves with ultrathin + CVD oxides compared to thermally grown oxides.
2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Tahmid Latif, James Dieffenderfer, Akhilesh Tanneeru, Bongmook Lee, Veena Misra, Alper Bozkurt
Summary: Wearable devices have the potential to improve asthma care by monitoring environmental conditions such as ozone concentration, while enclosure design and material selection are crucial for ensuring stable sensor operation.
Proceedings Paper
Engineering, Electrical & Electronic
Bongmook Lee, Michael Lim, Veena Misra
Summary: This study introduces a battery-powered wearable monitoring system for measuring VOCs emitted from human skin, capable of distinguishing between different lifestyle-related VOC levels, allowing for real-time monitoring and personalized exposure tracking.
Article
Engineering, Electrical & Electronic
Viswanath Padmanabhan Ramesh, Yasaman Sargolzaeiaval, Taylor Neumann, Veena Misra, Daryoosh Vashaee, Michael D. Dickey, Mehmet C. Ozturk
Summary: Flexible thermoelectric generators have been developed in this study to efficiently convert body heat into electrical energy, using low thermal conductivity aerogel-silicone composite and stretchable eutectic gallium-indium liquid metal interconnects. The results show promising potential for these wearable devices to serve as the main energy source for low-power health monitoring electronics.
NPJ FLEXIBLE ELECTRONICS
(2021)
Proceedings Paper
Energy & Fuels
Veena Misra, Alper Bozkurt, Benton H. Calhoun, Suman Datta, Michael Dickey, Mehdi Kiani, John Lach, Bongmook Lee, Jesse Jur, Omer Oralkan, Mehmet Ozturk, Ram Rajagopalan, Shad Roundy, Jason Strohmaier, Susan Trolier-McKinstry, Daryoosh Vashaee, David Wentzloff, Doug Werner
18TH INTERNATIONAL CONFERENCE ON MICRO AND NANOTECHNOLOGY FOR POWER GENERATION AND ENERGY CONVERSION APPLICATIONS
(2019)
