Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Enhancing electron transport in Si:P delta-doped devices by rapid thermal anneal
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 14, Pages 142105
Publisher
AIP Publishing
Online
2008-10-12
DOI
10.1063/1.2996582
References
View 2 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.