Observation of near interface oxide traps in single crystalline Nd2O3 on Si(111) by quasistatic C-V method

Single crystalline Nd2O3 based capacitors with proper forming gas annealing treatment are fabricated. By elevating the temperature of substrate to 100 degrees C, near interface oxide traps are observed according to the quasistatic C-V obtained at low frequency. Two types of traps, interface traps and near interface oxide traps, are demonstrated in this gate stack. Using the low-high frequency method, the interface trap density at flatband voltage condition and the near interface oxide trap density are estimated to be 5.17 X 10(11) eV(-1) cm(-2) and 3.75 X 10(12) cm(-2), respectively. The interface trap density is then further confirmed by the conductance method. (C) 2008 American Institute of Physics.