4.6 Article

Rapid crystallization of GeTe-Bi2Te3 mixed layer

Journal

APPLIED PHYSICS LETTERS
Volume 92, Issue 10, Pages -

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AMER INST PHYSICS
DOI: 10.1063/1.2895640

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We report rapid crystallization of GeTe-Bi2Te3 mixed layers. The as-deposited (GeTe)(1-x)(Bi2Te3)(x) (GBT) layers with x>0.5 are fcc crystalline, while the layers with x < 0.5 are amorphous, for cosputter deposition at room temperature. We found that Bi2Te3 significantly enhances the crystallization of the GBT layers. Furthermore, both temperature and minimum time required for crystallization (T-c and t(c,min)) of GBT layers are smaller than those of (GeTe)(1-x)(Sb2Te3)(x) (GST) layers. For example, crystallization of GBT layer with x=0.12 occurs at 155.0 degrees C within 30.9 ns, which is around 1/3 of 95.7 ns for Ge2Sb2Te5 with T-c=168.5 degrees C. (C) 2008 American Institute of Physics.

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