Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2836023
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- Engineering and Physical Sciences Research Council [GR/S27528/01] Funding Source: researchfish
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The prospect of developing a silicon laser has long been an elusive goal, mainly due to the indirect band gap and large effective carrier masses. We present a design for a terahertz intersubband laser grown on the [111] crystal plane and simulate performance using a rate equation method including scattering due to alloy disorder, interface roughness, carrier-phonon, and Coulombic interactions. We predict gain greater than 40 cm(-1) and a threshold current density of 70 A/cm(2).
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