Polarity dependent breakdown of the high-κ/SiOx gate stack:: A phenomenological explanation by scanning tunneling microscopy

From scanning tunneling microscopy, we present unambiguous evidence of thermally induced localized conduction paths exhibiting an asymmetrical conduction property in the high-kappa gate stack. The tunneling current under gate injection biasing is found to be much larger than that under substrate injection biasing after a 700 degrees C postdeposition anneal, i.e., the localized paths exhibit a much lower resistance under gate injection biasing. This finding provides a phenomenological explanation for the polarity dependent breakdown of the high-kappa gate stack as observed from electrical stressing of large-area metal-oxide-semiconductor capacitors. (c) 2008 American Institute of Physics.