Electron programing and hole erasing in silicon nanocrystal Flash memories with fin field-effect transistor architecture

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Electron programing and hole erasing in silicon nanocrystal Flash memories with fin field-effect transistor architecture
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 20, Pages 203503
Publisher
AIP Publishing
Online
2008-05-20
DOI
10.1063/1.2920204

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.