Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3040315
Keywords
aluminium compounds; electrical resistivity; gallium compounds; high electron mobility transistors; III-V semiconductors; semiconductor heterojunctions; tensile strength; wide band gap semiconductors; X-ray diffraction
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Funding
- NSF [ECS-0330226]
- ARO [W911NF-04-1-0428]
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Localized strain in AlGaN/GaN high electron mobility transistor (HEMT) device structures was studied by high resolution x-ray diffraction and rocking curve measurements, and the results were compared with the corresponding channel sheet resistance measurements. The map of in-plane tensile strain on the HEMT wafer showed a near one-to-one correspondence with the electrical resistivity. The in-plane strain variation in the range of (2.295-3.539)x10(-4) resulted in a corresponding sheet resistance variation between 345 and 411 Omega/square.
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