Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant

Published 2008 View Full Article

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Title
Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 9, Pages 092105
Publisher
AIP Publishing
Online
2008-03-05
DOI
10.1063/1.2890416

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