Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device

Published 2008 View Full Article

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Title
Hysteresis in In2O3:Zn nanowire field-effect transistor and its application as a nonvolatile memory device
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 18, Pages 183111
Publisher
AIP Publishing
Online
2008-11-08
DOI
10.1063/1.2995985
References
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