Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect

Published 2008 View Full Article

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Title
Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 1, Pages 012111
Publisher
AIP Publishing
Online
2008-01-05
DOI
10.1063/1.2830697

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