4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated AgO[sub x]/indium tin oxide anode modification

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Title
4.8% efficient poly(3-hexylthiophene)-fullerene derivative (1:0.8) bulk heterojunction photovoltaic devices with plasma treated AgO[sub x]/indium tin oxide anode modification
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 1, Pages 013306
Publisher
AIP Publishing
Online
2008-01-08
DOI
10.1063/1.2830619

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