☆ 4.6 Article

Dielectric and structural properties of thin SrHfO3 layers on TiN

APPLIED PHYSICS LETTERS (2008)

Journal

APPLIED PHYSICS LETTERS

Volume 93, Issue 25, Pages -

Publisher

AMER INST PHYSICS

DOI: 10.1063/1.3049611

Keywords

ab initio calculations; amorphous state; dielectric thin films; leakage currents; permittivity; rapid thermal annealing; strontium compounds; vacancies (crystal)

Categories

Physics, Applied

Funding

BMBF

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Abstract

We studied several properties of thin amorphous and polycrystalline SrHfO3 layers on TiN in the context of memory capacitor applications. Amorphous SrHfO3 has the dielectric constant kappa=21 and is transformed upon rapid thermal annealing into polycrystalline SrHfO3 with kappa=35. We discuss the influence of the annealing treatment on leakage currents, and briefly discuss, on the basis of ab initio calculations, the possible role of vacancylike defects and Ti contamination.

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