Enhanced electroluminescence intensity of InGaN∕GaN multi-quantum-wells based on Mg-doped GaN annealed in O2

Published 2008 View Full Article

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Title
Enhanced electroluminescence intensity of InGaN∕GaN multi-quantum-wells based on Mg-doped GaN annealed in O2
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 10, Pages 102112
Publisher
AIP Publishing
Online
2008-09-13
DOI
10.1063/1.2980032

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