Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments

Published 2008 View Full Article

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Title
Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 92, Issue 23, Pages 233120
Publisher
AIP Publishing
Online
2008-06-14
DOI
10.1063/1.2945637
References
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