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APPLIED PHYSICS LETTERS
Volume 92, Issue 24, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.2936932
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Current-voltage characteristics of Ga0.99In0.01As tunnel diodes are studied experimentally and theoretically. Three possible tunneling mechanisms are considered: direct band-to-band tunneling, phonon-assisted tunneling through defects, and resonant tunneling through defects. Comparison between theoretical results and experimental data reveals resonant tunneling through oxygen-related defects as the dominant transport mechanism at voltages corresponding to the peak current in diodes with doping level about 10(19) cm(-3). (c) 2008 American Institute of Physics.
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