Direct measurement of oxygen incorporation into thin film oxides at room temperature upon ultraviolet photon irradiation

Minute changes in oxygen concentration in complex oxides even of the order of similar to 0.001% can significantly influence functional properties ranging from the onset of superconductivity to colossal dielectric constant and ferroic response. We report on direct experimental measurement of enhanced oxygen incorporation into ultrathin oxide films at room temperature under gentle UV photon exposure. Oxygen concentration changes in nanoscale yttria doped zirconia (YDZ) films grown on Ge substrate were quantified using the (16)O(d,p)(17)O nuclear reaction. The oxygen concentration was consistently similar to 3% larger in UV irradiated YDZ films compared to as-grown YDZ films. Possible incorporation mechanisms are discussed.