Journal
APPLIED PHYSICS LETTERS
Volume 93, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3000017
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Funding
- Information Display RD Center [F0004020-2006-22]
- Ministry of Commerce, Industry and Energy of the Korean Government
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The thin-film passivation of organic field-effect transistors (OFETs) using AlOx films grown by atomic layer deposition was investigated. A high-quality AlOx passivation layer was deposited on OFETs at 90 degrees C using trimethylaluminum and water. Despite the low deposition temperature, the 50-nm-thick AlOx passivation layers exhibited a low water-vapor-transmission-rate value of 0.0434 g/m(2)/day. In addition, the mobility of the AlOx-passivated OFETs was only slightly below that of the unpassivated devices (i.e., within 9%). Unlike unpassivated devices, the electric performance of the passivated OFETs remained almost unchanged after 2 months as a result of the excellent barrier properties of the passivation layer. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000017].
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