Article
Nanoscience & Nanotechnology
Mari Napari, Tahmida N. Huq, David J. Meeth, Mikko J. Heikkil, Kham M. Niang, Han Wang, Tomi Iivonen, Haiyan Wang, Markku Leskela, Mikko Ritala, Andrew J. Flewitt, Robert L. Z. Hoye, Judith L. MacManus-Driscoll
Summary: High-performance p-type oxide thin film transistors (TFTs) have great potential for semiconductor applications, but often suffer from low hole mobility and high off-state currents. By applying a thin ALD Al2O3 passivation layer on the Cu2O channel and vacuum annealing, the TFT switching characteristics can be improved. Characterization by TEM-EDX and XPS shows that Al2O3 deposition on Cu2O reduces surface and forms a CuAlO2 interfacial layer. This, along with field-effect passivation, leads to improved TFT performance by reducing trap states and electron accumulation in the off-state.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Xue Chen, Jiaxian Wan, Hao Wu, Chang Liu
Summary: Passivation of oxide-based thin film transistors still poses a challenge due to the need for thermal treatments, which can impact the transistor characteristics. By reducing the growth temperatures of passivation layers, the performance of TFTs can be maintained within an acceptable range. Among all devices, TFTs with Al2O3 PVLs deposited at 100 degrees C using H2O as oxidant exhibit high mobility, proper threshold voltage, low subthreshold swing, and excellent stability.
APPLIED SURFACE SCIENCE
(2021)
Article
Chemistry, Multidisciplinary
Antonio Gaetano Ricciardulli, Ye Wang, Sheng Yang, Paolo Samori
Summary: The synthesis of novel 2D materials with unprecedented composition and structure through the exfoliation of layered systems provides access to unexplored properties. This study reports on the sonication-assisted liquid-phase exfoliation of violet phosphorus (VP) crystals and the exploration of its electrical and optical properties. The exfoliated VP thin films exhibit p-type transport and excellent optoelectronic performances, making VP a promising candidate for next-generation electronics.
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
(2022)
Article
Materials Science, Multidisciplinary
Song-Yi Ahn, Seong Cheol Jang, Aeran Song, Kwun-Bum Chung, Yong Joo Kim, Hyun-Suk Kim
Summary: The study found that SiOx passivation layer can reduce oxygen content, promote valence band delocalization of SnO semiconductor, and improve hole transport. Therefore, SnO TFTs with SiOx protective layer exhibit higher field-effect mobility compared to devices without passivation.
MATERIALS TODAY COMMUNICATIONS
(2021)
Article
Physics, Applied
D. E. Gomersall, A. J. Flewitt
Summary: The aim of this work was to optimize the reactant delivery parameters for the PECVD of p-type Cu2O films and explore an alternative to other deposition techniques. The Cu2O films deposited using PECVD showed good stability and high Hall mobility, making it a viable option for large-scale industrial application.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Summary: This study investigates the impact of annealing time of the Y2O3 passivation layer on the electrical properties and bias stabilities of sol-gel-deposited SnO2 thin-film transistors (TFTs). Optimization of the Y2O3 passivation layer improves the field-effect mobility, subthreshold swing, and on/off-current ratio of the SnO2 TFTs. The annealing time also controls the thickness and oxygen-vacancy concentration in the SnO2 channel layer. A thin Y2O3 passivation layer effectively blocks external molecules and enhances the device performance. A 15 min-annealed Y2O3 passivation layer achieves maximum electrical performance and long-term stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Review
Chemistry, Physical
Zhuping Ouyang, Wanxia Wang, Mingjiang Dai, Baicheng Zhang, Jianhong Gong, Mingchen Li, Lihao Qin, Hui Sun
Summary: This paper summarizes the structure and performance of p-Type oxide TFTs and discusses the progress and challenges in oxide transistor research. The microstructures of three types of p-Type oxides and significant efforts to improve the performance of oxide TFTs are highlighted. Finally, the latest progress and prospects of oxide TFTs based on p-Type oxide semiconductors and other p-Type semiconductor electronic devices are discussed.
Article
Materials Science, Multidisciplinary
Yaoqiao Hu, Darrell Schlom, Suman Datta, Kyeongjae Cho
Summary: A Sn2+ based oxide, ilmenite SnTiO3, with a dispersive valence band and wide band gap of 2.4 eV has been investigated as a potential p-type oxide. It exhibits a high hole mobility of 60 cm(2) V-1 s(-1) and phase stability. Defect calculations show it has high hole dopability, and band alignment calculations indicate its suitability for metal contact. Amorphous phase SnTiO3 has been found to be a highly mobile hole-dopable oxide. These findings suggest that ilmenite and amorphous SnTiO3 are promising p-type oxides for future oxide electronics.
JOURNAL OF MATERIALS CHEMISTRY C
(2023)
Article
Physics, Applied
Kishwar Mashooq, Jaesung Jo, Rebecca L. Peterson
Summary: In this study, an ambipolar SnO inverter with record high gain was demonstrated and the key factors affecting the gain were identified, highlighting the potential of ambipolar SnO TFTs for future high-performance complementary thin film circuits.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Ji-Young Go, Gwon Byeon, Taesu Choi, Shuzhang Yang, Wenwu Li, Yong-Young Noh
Summary: This study explores the potential of using an organic salt, N,N-dimethylanilinium tetrakis(pentafluorophenyl)borate, as a dopant for Sn-based perovskite devices. The thin film transistors based on the doped 2D/3D perovskite PEAFASnI(3) show remarkable improvement in hole mobility, with a low subthreshold swing, small sweep hysteresis, and exceptional bias stability. The bulky chemical structure of the dopant prevents it from penetrating the perovskite lattice and provides surface passivation against Sn oxidation.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Hongseok Oh, Shadi A. Dayeh
Summary: Highly sensitive force sensors of piezoelectric zinc oxide dual-gate thin film transistors are reported, along with an analytical model that elucidates the physical origins of their response. The dual-gate TFTs exhibited static and transient current changes under external forces, with an analytical model accurately portraying the piezoelectric response that modulates the energy-band edges and current-voltage characteristics. Demonstrating a field-tunable force response in single TFT, this work sheds light on the correlation between material properties and the force response in piezoelectric TFTs.
ADVANCED MATERIALS TECHNOLOGIES
(2021)
Article
Electrochemistry
A. M. Goncalves, G. Visagli, C. P. Rakotoarimanana, C. Njel, M. Fregnaux, A. Etcheberry
Summary: This study investigates the photoanodic behavior of undoped n-InP in liquid ammonia at low temperature under atmospheric pressure for the first time. The low doping level allows monitoring of charge transfer at the interface by only involving photo-generated holes in the passivation mechanism. Specific photoanodic transient phenomena are observed due to the availability of photo-holes at the interface, which depends on light intensity.
ELECTROCHIMICA ACTA
(2023)
Article
Engineering, Electrical & Electronic
Xing Yuan, Wei Dou, Yifan Wang, Jing Zeng, Liushun Wang, Liuhui Lei, Dongsheng Tang
Summary: This study demonstrates the use of copper iodide (CuI) as the channel layer in thin-film transistors (TFTs) to achieve NAND logic function for the first time. The optimization of TFTs through annealing and the replacement of standard silica gate dielectric with chitosan with electric-double-layer (EDL) effect result in improved performance. These p-type CuI TFTs have the potential to be used in complementary electronic circuits with low energy consumption and portable sensors.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Ablat Abliz, Xiongxiong Xue, Xingqiang Liu, Guoli Li, Liming Tang
Summary: The study found that N/H co-doping can significantly enhance the electrical performance of ZnO thin-film transistors, mainly due to the reduction of defect concentration and interface trap density after co-doping.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Haijuan Wu, Lingyan Liang, Xiaolong Wang, Xixiu Shi, Hengbo Zhang, Yu Pei, Wanfa Li, Bo Sun, Cai Shen, Hongtao Cao
Summary: Achievement of high-performance p-channel copper iodide (CuI) thin-film transistors (TFTs) with a bottom-gate structure is demonstrated by replacing SiO2 dielectric with Chitosan (CS), resulting in a threshold voltage of -0.35 V, a field-effect mobility (WFE) up to 60 cm2V- 1s- 1, and an on/off current ratio (Ion/Ioff) beyond 103. CuI films on CS-dielectrics exhibit a smoother surface morphology, tinier grains, higher packing density, and a lower work function compared to those on SiO2, leading to enhanced performance. Low process temperature (<50 C) enables the realization of flexible and transparent CuI TFTs with comparable performance to those on rigid ITO glass. Moreover, complementary inverters composed of p-type CuI and n-type ITO TFTs exhibit clear inverting characteristics and voltage gain of over 20.
APPLIED SURFACE SCIENCE
(2023)
