Crossbar arrays of nonvolatile, rewritable polymer ferroelectric diode memories on plastic substrates

In this paper, we demonstrate a scalable and low-cost memory technology using a phase separated blend of a ferroelectric polymer and a semiconducting polymer as data storage medium on thin, flexible polyester foils of only 25 mu m thickness. By sandwiching this polymer blend film between rows and columns of metal electrode lines where each intersection makes up one memory cell, we obtained 1 kbit cross bar arrays with bit densities of up to 10 kbit/cm(2). (C) 2014 The Japan Society of Applied Physics