Article
Chemistry, Multidisciplinary
Xinkai Xu, Dainan Zhang, Bo Liu, Hao Meng, Jiapeng Xu, Zhiyong Zhong, Xiaoli Tang, Huaiwu Zhang, Lichuan Jin
Summary: This work reports a group of spin Hall materials, Pt-1(-x)(TiO2)(x) nanocomposites, that combines a giant spin Hall effect with a low resistivity. The giant enhancement of spin Hall angle in Pt-0.94(TiO2)(0.06) nanocomposite film is attributed to strong side-jump induced by TiO2 impurities.
Article
Engineering, Electrical & Electronic
Navid Alimohammadi, Zahra Alaie
Summary: AOSC made of topological insulators can reverse magnetization using short laser pulses, but multiple pulses are needed for ferromagnetic multilayers, reducing speed and efficiency. By using single-pulse mid-infrared and microwave photoexcitation, ultrafast manipulation of magnetic domains in Bi2Se3 synthetic ferromagnetic material can be achieved, enhancing the write efficiency on ferromagnetic materials. This new method may pave the way for integrated photonic current based memory circuits.
OPTICAL AND QUANTUM ELECTRONICS
(2021)
Article
Physics, Multidisciplinary
X. R. Wang
Summary: The authors demonstrate an anomalous spin Hall and inverse spin Hall effect, predicting the generation of spin currents with different directions in magnetic systems. This offers potential applications in spintronics for generating spin currents with various polarization orientations.
COMMUNICATIONS PHYSICS
(2021)
Article
Materials Science, Multidisciplinary
Zhihao Chen, Yu Chen, Yaodong Wu, Xinxing Zhou, Handong Sun, Tony Low, Hongsheng Chen, Xiao Lin
Summary: The photonic spin Hall effect, which is a manifestation of the spin-orbit interaction of light, can be measured through the transverse shift of photons with opposite spins. However, current methods to generate a large spin Hall effect have limitations, occurring only within a narrow angle range. This study proposes a universal scheme to achieve a wide-angle giant photonic spin Hall effect by utilizing the interface between free space and uniaxial epsilon-near-zero media.
Article
Physics, Applied
Yujie Tang, Xiao Liang, Tingting Tang, Lei Bi, Chaoyang Li, Tongtong Kang, Jun Qin, Jie Li, Yu He, Ke Shen, Jingduo Xu
Summary: In this paper, current-induced switching of the photonic spin Hall effect (PSHE) is demonstrated by using Pt electrodes to cap Ce1Dy2Al0.42Fe4.58O12 thin film, which is mediated by spin-orbit torques at the Pt/Ce1Dy2Al0.42Fe4.58O12 interface. The results show that the transverse beam shifts related to the PSHE can be reversed by applying a small order of magnitude charge current (similar to 10(8) A center dot m(-2)) to the Pt layer in opposite directions, indicating low dissipation in the proposed heterostructure.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Jimin Jeong, Min-Gu Kang, Soogil Lee, Jaimin Kang, Kyung-Jin Lee, Byong-Guk Park
Summary: In this study, the modulation of magnetic easy-cone states through voltage-controlled magnetic anisotropy (VCMA) significantly reduced the SOT switching current. The SOT switching current density is reduced by up to 50% when the easy-cone angle is changed from 0 degrees to 58 degrees. The magnetic easy-cone state is gradually modulated in a reversible and non-volatile manner, facilitating multilevel spintronic devices.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Zui Tao, Bowen Shen, Wenjin Zhao, Nai Chao Hu, Tingxin Li, Shengwei Jiang, Lizhong Li, Kenji Watanabe, Takashi Taniguchi, Allan H. MacDonald, Jie Shan, Kin Fai Mak
Summary: A giant intrinsic spin Hall effect coexisting with ferromagnetism has been observed in AB-stacked MoTe2/WSe2 moire hetero-bilayers. This finding demonstrates the potential of moire engineering for spintronics applications, as it enables long-range spin Hall transport.
NATURE NANOTECHNOLOGY
(2023)
Article
Chemistry, Multidisciplinary
Yilv Guo, Xing Yu, Yehui Zhang, Xiwen Zhang, Shijun Yuan, Yafei Li, Shengyuan A. Yang, Jinlan Wang
Summary: This research proposes a new type of spin-constrained photoelectric memory using two-dimensional magnetic/ferroelectric heterostructures, which enables low-power electrical write operation and nondestructive optical read operation. The storage utilizes the polarization direction to alter the ferromagnetic and antiferromagnetic orderings in the magnetic layer, and records the spin-polarized/unpolarized current as the 1/0 state for logic processing and memory applications. First-principles calculations suggest that the NiI2/In2Se3 heterobilayer is an ideal candidate for such a spin-dependent photoelectric memory.
Article
Optics
Min Cheng, Ping Fu, Shengyu Chen
Summary: In this study, the photonic spin Hall effect (PSHE) in bilayer borophene metasurfaces was theoretically investigated. The transmitted beams exhibited giant PSHE shifts, which could be flexibly controlled by adjusting parameters such as the twist angle of metasurface bilayers, incident angle, spacer refractive index, and thickness. The magnitude of PSHE shifts in bilayer borophene metasurfaces was generally on the order of tens to hundreds of wavelengths near the topological transition and even near the epsilon-near-zero (ENZ) regions. By tuning the ribbon width of borophene metasurface or the electron density, the manipulation frequency range of the large PSHE shifts could achieve hundreds of terahertz or even picohertz. The ultrahigh sensitivity of the PSHE shifts to spacer refractive index in bilayer borophene metasurfaces can be utilized for designing high-performance refractive index sensors.
Article
Nanoscience & Nanotechnology
Yuhang Song, Zhiming Dai, Long Liu, Jinxiang Wu, Tingting Li, Xiaotian Zhao, Wei Liu, Zhidong Zhang
Summary: This study proposes a method to achieve field-free switching using the spin Hall effect, and realizes the switching of magnetic memory by the cooperation of electrons polarized in the z direction and electrons polarized in the y direction. By depositing heavy metals on the magnetic tunnel junction, read-write separation and deterministic switching can be achieved based on SOT.
ADVANCED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Sanjay Prajapati, Vikas Nehra, Brajesh Kumar Kaushik
Summary: With the emergence of nanoscale magnetic tunnel junction spintronic devices, computing-in-memory architectures have experienced rapid growth, with designs based on spin-transfer torque and spin Hall effect. By utilizing differential spin Hall MRAM and multilevel cell structures, the proposed designs save on write energy and also reduce storage area.
IEEE TRANSACTIONS ON MAGNETICS
(2021)
Article
Materials Science, Multidisciplinary
T. Nathan Nunley, Side Guo, Liang-Juan Chang, David Lujan, Jeongheon Choe, Shang-Fan Lee, Fengyuan Yang, Xiaoqin Li
Summary: Recent research has found that thulium iron garnet (TmIG) based bilayers show promise in realizing small skyrmions at room temperature. By directly measuring the magnetic hysteresis loops, researchers have determined that the spin Hall topological Hall resistivity is considerably larger than previously estimated values. This finding further confirms the existence of skyrmions at room temperature and near-zero applied magnetic fields.
Article
Chemistry, Multidisciplinary
Wenqing He, Caihua Wan, Cuixiu Zheng, Yizhan Wang, Xiao Wang, Tianyi Ma, Yuqiang Wang, Chenyang Guo, Xuming Luo, Maksim E. Stebliy, Guoqiang Yu, Yaowen Liu, Alexey V. Ognev, Alexander S. Samardak, Xiufeng Han
Summary: This study observes an intrinsic interlayer chiral interaction effect in a Pt/Co multilayer film and its synthetic antiferromagnetic counterpart with perpendicular magnetic anisotropy. By applying a current parallel to the eigenvector of the interlayer interaction, the perpendicular magnetization of both structures can be switched without a magnetic field, providing a new possibility for practical perpendicular SOT-MRAM and other SOT devices.
Article
Multidisciplinary Sciences
Yukako Fujishiro, Naoya Kanazawa, Ryosuke Kurihara, Hiroaki Ishizuka, Tomohiro Hori, Fehmi Sami Yasin, Xiuzhen Yu, Atsushi Tsukazaki, Masakazu Ichikawa, Masashi Kawasaki, Naoto Nagaosa, Masashi Tokunaga, Yoshinori Tokura
Summary: The electrical Hall effect, known as the anomalous Hall effect (AHE), can be significantly enhanced through the interaction of conduction electrons with magnetism. In a study on a chiral magnet MnGe thin film, giant AHE of electron-scattering origin was observed, attributed to a new type of skew-scattering mechanism involving thermally excited spin-clusters with scalar spin chirality.
NATURE COMMUNICATIONS
(2021)
Article
Physics, Multidisciplinary
Soogil Lee, Min-Gu Kang, Dongwook Go, Dohyoung Kim, Jun-Ho Kang, Taekhyeon Lee, Geun-Hee Lee, Jaimin Kang, Nyun Jong Lee, Yuriy Mokrousov, Sanghoon Kim, Kab-Jin Kim, Kyung-Jin Lee, Byong-Guk Park
Summary: The Spin Hall effect enables efficient control of magnetization, while the recent discovery of the orbital Hall effect reveals the potential for larger orbital current generation. However, a conversion process from orbital current to spin current is necessary to exert torque on a ferromagnet. By introducing rare-earth ferromagnet Gd or a Pt interfacial layer with strong spin-orbit coupling in Cr/ferromagnet structures, the orbital Hall torque can be greatly enhanced, allowing for more efficient magnetization control in spin-orbit-torque-based spintronic devices.
COMMUNICATIONS PHYSICS
(2021)
Review
Physics, Condensed Matter
Anjan Barman, Gianluca Gubbiotti, S. Ladak, A. O. Adeyeye, M. Krawczyk, J. Grafe, C. Adelmann, S. Cotofana, A. Naeemi, V. Vasyuchka, B. Hillebrands, S. A. Nikitov, H. Yu, D. Grundler, A. Sadovnikov, A. A. Grachev, S. E. Sheshukova, J-Y Duquesne, M. Marangolo, G. Csaba, W. Porod, V. E. Demidov, S. Urazhdin, S. O. Demokritov, E. Albisetti, D. Petti, R. Bertacco, H. Schultheiss, V. V. Kruglyak, V. D. Poimanov, S. Sahoo, J. Sinha, H. Yang, M. Munzenburg, T. Moriyama, S. Mizukami, P. Landeros, R. A. Gallardo, G. Carlotti, J- Kim, R. L. Stamps, R. E. Camley, B. Rana, Y. Otani, W. Yu, T. Yu, G. E. W. Bauer, C. Back, G. S. Uhrig, O. Dobrovolskiy, B. Budinska, H. Qin, S. van Dijken, A. Chumak, A. Khitun, D. E. Nikonov, I. A. Young, B. W. Zingsem, M. Winklhofer
Summary: Magnonics is a burgeoning research field that focuses on utilizing spin waves to transmit, store, and process information, showing significant progress in the past decade. The key challenges include excitation of sub-100 nm wavelength magnons, manipulation on the nanoscale, and creation of sub-micrometre devices using low-Gilbert damping magnetic materials. Magnonics offers advantages such as lower energy consumption, easier integrability, compatibility with CMOS structure, reprogrammability, shorter wavelength, smaller device features, anisotropic properties, negative group velocity, non-reciprocity, and efficient tunability by various external stimuli.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2021)
Article
Engineering, Electrical & Electronic
Yu-Ching Liao, Chia-Sheng Hsu, Dmitri Nikonov, Sou-Chi Chang, Hai Li, Ian A. Young, Azad Naeemi
Summary: This study investigates the potential performance of magnetoelectric magnetic random access memory (ME-MRAM) using a bismuth ferrite (BFO)/CoFe heterojunction. Circuit-compatible models and micromagnetic simulations were used to analyze the write and read performances of ME-MRAM. The results show that ME-MRAM has lower energy consumption and a smaller layout area compared to SRAM and other spintronic memory candidates.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Y. Jiang, E. Parsonnet, A. Qualls, W. Zhao, S. Susarla, D. Pesquera, A. Dasgupta, M. Acharya, H. Zhang, T. Gosavi, C-C Lin, D. E. Nikonov, H. Li, I. A. Young, R. Ramesh, L. W. Martin
Summary: This article demonstrates high-quality BaTiO3 thin films with nearly bulk-like properties. The scaling of film thickness allows for the access of required coercive voltages and fields for future applications, as well as fast switching speeds and a pathway to subnanosecond switching. Integration of BaTiO3 thin films onto silicon substrates is also shown, with further work discussed.
Article
Multidisciplinary Sciences
Qiwu Shi, Eric Parsonnet, Xiaoxing Cheng, Natalya Fedorova, Ren-Ci Peng, Abel Fernandez, Alexander Qualls, Xiaoxi Huang, Xue Chang, Hongrui Zhang, David Pesquera, Sujit Das, Dmitri Nikonov, Ian Young, Long-Qing Chen, Lane W. Martin, Yen-Lin Huang, Jorge Iniguez, Ramamoorthy Ramesh
Summary: This study elucidates the fundamental role of lattice dynamics in ferroelectric switching and highlights the importance of a dynamic clamping process occurring during switching.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Multidisciplinary
Eric Parsonnet, Lucas Caretta, Vikram Nagarajan, Hongrui Zhang, Hossein Taghinejad, Piush Behera, Xiaoxi Huang, Pravin Kavle, Abel Fernandez, Dmitri Nikonov, Hai Li, Ian Young, James Analytis, Ramamoorthy Ramesh
Summary: The research demonstrates the ability to control thermally excited magnon current using electric fields, without the need for an applied magnetic field. This finding is a significant step towards the development of magnon-based devices that can be solely controlled by electric fields.
PHYSICAL REVIEW LETTERS
(2022)
Review
Materials Science, Multidisciplinary
Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter A. Dowben
Summary: Transition metal trichalcogenides (TMTs) are 2D materials with potential applications in low-dimensional optical and electronic devices. However, the performance of 2D devices based on TMTs has been limited by contact-related issues. In this review, the interfacial interactions between gold and various TMTs were investigated to find solutions to these problems.
JOURNAL OF MATERIALS RESEARCH
(2023)
Article
Chemistry, Multidisciplinary
Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J. Plombon, Hai Li, Dmitri E. Nikonov, Andrey Chuvilin, Luis E. Hueso, Ian A. . Young, Felix Casanova
Summary: This study demonstrates all-electrical spin-to-charge conversion in BixSe1-x nanodevices and reveals that the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. This is attributed to the intermixing-induced compositional change and the properties of a polycrystal. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.
Article
Engineering, Electrical & Electronic
Anni Lu, Jae Hur, Yuan-Chun Luo, Hai Li, Dmitri E. Nikonov, Ian A. Young, Yang-Kyu Choi, Shimeng Yu
Summary: This paper proposes scalable in-memory annealers to solve large-scale travelling salesman problems (TSP) using crossbar arrays of FinFET based charge trap transistors. Two hardware implementations are used: Hopfield neural network (HNN) based design and index-based design. Hierarchical clustering algorithms are adopted to overcome scalability challenge and speed up system convergence.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
(2023)
Article
Engineering, Electrical & Electronic
Mohammad Adnaan, Sou-Chi Chang, Hai Li, Dmitri Nikonov, Ian A. Young, Azad Naeemi
Summary: A generalized and fast multidomain phase-field-based compact model for the metal-ferroelectric-metal (MFM) capacitor is proposed, which solves time-dependent Landau-Ginzburg (TDGL) and Poisson's equations self-consistently. Physics-based empirical relationships for voltage-dependent kinetic and gradient energy coefficients are formulated. The developed model is significantly faster and shows good agreement with experimental results, making it suitable for fast and accurate simulations of large-scale circuits with ferroelectric capacitors.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Multidisciplinary Sciences
Connor Bybee, Denis Kleyko, Dmitri E. Nikonov, Amir Khosrowshahi, Bruno A. Olshausen, Friedrich T. Sommer
Summary: This article introduces Ising machines as a prominent approach to solving combinatorial optimization problems on parallel hardware. The authors demonstrate that higher-order Ising machines can be more resource-efficient and provide better solutions compared to traditional second-order Ising machines.
NATURE COMMUNICATIONS
(2023)
Review
Nanoscience & Nanotechnology
Dmitri E. Nikonov, Hai Li, Ian A. Young
Summary: As CMOS electronics scaling continues, active research is being conducted to explore logic devices beyond CMOS for a more energy efficient integrated circuit platform. Spintronic devices, with their non-volatility and low switching energy, are a prominent option. Simulation plays a key role in this research due to the reliance on novel materials, device structures, and circuit architecture. This paper reviews recent publications that cover different levels of the computing stack, including prevalent methods, experimental comparisons, and proposals for new logic concepts.
IEEE NANOTECHNOLOGY MAGAZINE
(2023)
Proceedings Paper
Computer Science, Artificial Intelligence
Denis Kleyko, Connor Bybee, Christopher Kymn, Bruno Olshausen, Amir Khosrowshahi, Dmitri E. Nikonov, Friedrich T. Sommer, Paxon Frady
Summary: This paper presents an approach to integer factorization using Vector Symbolic Architectures, and demonstrates its performance on semiprimes factorization. The method can be generalized to factorize other composite numbers and solve similar difficult problems in different domains.
PROCEEDINGS OF THE 2022 ANNUAL NEURO-INSPIRED COMPUTATIONAL ELEMENTS CONFERENCE (NICE 2022)
(2022)
Article
Materials Science, Multidisciplinary
Natalya S. Fedorova, Dmitri E. Nikonov, Hai Li, Ian A. Young, Jorge Iniguez
Summary: In this paper, the simplest, lowest-order Landau-like potential for BiFeO3 and La-doped BiFeO3 is introduced, which is expanded in powers of polarization, FeO6 octahedral rotations, and strains. An analytical approach is presented for computing the model parameters from density-functional theory. The potentials for BiFeO3 and La0.25Bi0.75FeO3 are computed, and it is shown that the first-principles results are accurately captured, including properties that were not considered for the calculation of the model parameters. The computed models allow the identification and explanation of the main interactions controlling the relative stability of the competing low-energy phases of these compounds.
Article
Computer Science, Hardware & Architecture
Hai Li, Dmitri E. Nikonov, Chia-Ching Lin, Kerem Camsari, Yu-Ching Liao, Chia-Sheng Hsu, Azad Naeemi, Ian A. Young
Summary: Spintronic devices are a promising option for beyond-CMOS devices due to their energy efficiency and compatibility with CMOS. This study presents physics-based device models for the spin-orbit coupling part of the magneto-electric spin-orbit device, as well as a more rigorous physics model for ferroelectric and magnetoelectric switching. The combined model, implemented in a SPICE circuit simulator, demonstrates the feasibility and functional operation of MESO devices.
IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS
(2022)
Article
Engineering, Electrical & Electronic
Punyashloka Debashis, Hai Li, Dmitri Nikonov, Ian Young
Summary: Generating high-quality random numbers with a Gaussian probability distribution is a resource-intensive task in the fields of machine learning and Monte Carlo algorithms. A new GRNG based on interconnected thermally unstable magnetic tunnel junctions is presented, which can produce multibit Gaussian random numbers at gigahertz speed and configure distributions with desired mean and variance.
IEEE MAGNETICS LETTERS
(2022)