4.5 Article

Energy-delay performance of giant spin Hall effect switching for dense magnetic memory

Journal

APPLIED PHYSICS EXPRESS
Volume 7, Issue 10, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.7567/APEX.7.103001

Keywords

-

Ask authors/readers for more resources

We show that the giant spin Hall effect (GSHE) magnetoresistive random access memory (MRAM) can enable better energy delay and voltage performance than MTJ spin torque devices at 10-30 nm scaled nanomagnet dimensions. We propose a dense bit cell composed of a folded electrode to enable scaling to sub-10 nm CMOS. We derive the energy-delay trajectory and energy-delay product of GSHE and MTJ devices with an energy minimum at the magnetic characteristic time. Optimized GSHE devices with PMA can enable low voltage (<0.1 V), scaled dimensions, and fast switching time (100 Ps) at an average switching energy approaching 100 aJ/bit. (C) 2014 The Japan Society of Applied Physics

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.5
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

Review Physics, Condensed Matter

The 2021 Magnonics Roadmap

Anjan Barman, Gianluca Gubbiotti, S. Ladak, A. O. Adeyeye, M. Krawczyk, J. Grafe, C. Adelmann, S. Cotofana, A. Naeemi, V. Vasyuchka, B. Hillebrands, S. A. Nikitov, H. Yu, D. Grundler, A. Sadovnikov, A. A. Grachev, S. E. Sheshukova, J-Y Duquesne, M. Marangolo, G. Csaba, W. Porod, V. E. Demidov, S. Urazhdin, S. O. Demokritov, E. Albisetti, D. Petti, R. Bertacco, H. Schultheiss, V. V. Kruglyak, V. D. Poimanov, S. Sahoo, J. Sinha, H. Yang, M. Munzenburg, T. Moriyama, S. Mizukami, P. Landeros, R. A. Gallardo, G. Carlotti, J- Kim, R. L. Stamps, R. E. Camley, B. Rana, Y. Otani, W. Yu, T. Yu, G. E. W. Bauer, C. Back, G. S. Uhrig, O. Dobrovolskiy, B. Budinska, H. Qin, S. van Dijken, A. Chumak, A. Khitun, D. E. Nikonov, I. A. Young, B. W. Zingsem, M. Winklhofer

Summary: Magnonics is a burgeoning research field that focuses on utilizing spin waves to transmit, store, and process information, showing significant progress in the past decade. The key challenges include excitation of sub-100 nm wavelength magnons, manipulation on the nanoscale, and creation of sub-micrometre devices using low-Gilbert damping magnetic materials. Magnonics offers advantages such as lower energy consumption, easier integrability, compatibility with CMOS structure, reprogrammability, shorter wavelength, smaller device features, anisotropic properties, negative group velocity, non-reciprocity, and efficient tunability by various external stimuli.

JOURNAL OF PHYSICS-CONDENSED MATTER (2021)

Article Engineering, Electrical & Electronic

Evaluating the Performances of the Ultralow Power Magnetoelectric Random Access Memory With a Physics-Based Compact Model of the Antiferromagnet/Ferromagnet Bilayer

Yu-Ching Liao, Chia-Sheng Hsu, Dmitri Nikonov, Sou-Chi Chang, Hai Li, Ian A. Young, Azad Naeemi

Summary: This study investigates the potential performance of magnetoelectric magnetic random access memory (ME-MRAM) using a bismuth ferrite (BFO)/CoFe heterojunction. Circuit-compatible models and micromagnetic simulations were used to analyze the write and read performances of ME-MRAM. The results show that ME-MRAM has lower energy consumption and a smaller layout area compared to SRAM and other spintronic memory candidates.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2022)

Article Chemistry, Physical

Enabling ultra-low-voltage switching in BaTiO3

Y. Jiang, E. Parsonnet, A. Qualls, W. Zhao, S. Susarla, D. Pesquera, A. Dasgupta, M. Acharya, H. Zhang, T. Gosavi, C-C Lin, D. E. Nikonov, H. Li, I. A. Young, R. Ramesh, L. W. Martin

Summary: This article demonstrates high-quality BaTiO3 thin films with nearly bulk-like properties. The scaling of film thickness allows for the access of required coercive voltages and fields for future applications, as well as fast switching speeds and a pathway to subnanosecond switching. Integration of BaTiO3 thin films onto silicon substrates is also shown, with further work discussed.

NATURE MATERIALS (2022)

Article Multidisciplinary Sciences

The role of lattice dynamics in ferroelectric switching

Qiwu Shi, Eric Parsonnet, Xiaoxing Cheng, Natalya Fedorova, Ren-Ci Peng, Abel Fernandez, Alexander Qualls, Xiaoxi Huang, Xue Chang, Hongrui Zhang, David Pesquera, Sujit Das, Dmitri Nikonov, Ian Young, Long-Qing Chen, Lane W. Martin, Yen-Lin Huang, Jorge Iniguez, Ramamoorthy Ramesh

Summary: This study elucidates the fundamental role of lattice dynamics in ferroelectric switching and highlights the importance of a dynamic clamping process occurring during switching.

NATURE COMMUNICATIONS (2022)

Article Physics, Multidisciplinary

Nonvolatile Electric Field Control of Thermal Magnons in the Absence of an Applied Magnetic Field

Eric Parsonnet, Lucas Caretta, Vikram Nagarajan, Hongrui Zhang, Hossein Taghinejad, Piush Behera, Xiaoxi Huang, Pravin Kavle, Abel Fernandez, Dmitri Nikonov, Hai Li, Ian Young, James Analytis, Ramamoorthy Ramesh

Summary: The research demonstrates the ability to control thermally excited magnon current using electric fields, without the need for an applied magnetic field. This finding is a significant step towards the development of magnon-based devices that can be solely controlled by electric fields.

PHYSICAL REVIEW LETTERS (2022)

Review Materials Science, Multidisciplinary

What happens when transition metal trichalcogenides are interfaced with gold?

Archit Dhingra, Dmitri E. Nikonov, Alexey Lipatov, Alexander Sinitskii, Peter A. Dowben

Summary: Transition metal trichalcogenides (TMTs) are 2D materials with potential applications in low-dimensional optical and electronic devices. However, the performance of 2D devices based on TMTs has been limited by contact-related issues. In this review, the interfacial interactions between gold and various TMTs were investigated to find solutions to these problems.

JOURNAL OF MATERIALS RESEARCH (2023)

Article Chemistry, Multidisciplinary

All-Electrical Spin-to-Charge Conversion in Sputtered BixSe1-x

Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J. Plombon, Hai Li, Dmitri E. Nikonov, Andrey Chuvilin, Luis E. Hueso, Ian A. . Young, Felix Casanova

Summary: This study demonstrates all-electrical spin-to-charge conversion in BixSe1-x nanodevices and reveals that the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. This is attributed to the intermixing-induced compositional change and the properties of a polycrystal. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.

NANO LETTERS (2022)

Article Engineering, Electrical & Electronic

Scalable In-Memory Clustered Annealer With Temporal Noise of Charge Trap Transistor for Large Scale Travelling Salesman Problems

Anni Lu, Jae Hur, Yuan-Chun Luo, Hai Li, Dmitri E. Nikonov, Ian A. Young, Yang-Kyu Choi, Shimeng Yu

Summary: This paper proposes scalable in-memory annealers to solve large-scale travelling salesman problems (TSP) using crossbar arrays of FinFET based charge trap transistors. Two hardware implementations are used: Hopfield neural network (HNN) based design and index-based design. Hierarchical clustering algorithms are adopted to overcome scalability challenge and speed up system convergence.

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS (2023)

Article Engineering, Electrical & Electronic

A Compact Model for Ferroelectric Capacitors Based on Multidomain Phase-Field Framework

Mohammad Adnaan, Sou-Chi Chang, Hai Li, Dmitri Nikonov, Ian A. Young, Azad Naeemi

Summary: A generalized and fast multidomain phase-field-based compact model for the metal-ferroelectric-metal (MFM) capacitor is proposed, which solves time-dependent Landau-Ginzburg (TDGL) and Poisson's equations self-consistently. Physics-based empirical relationships for voltage-dependent kinetic and gradient energy coefficients are formulated. The developed model is significantly faster and shows good agreement with experimental results, making it suitable for fast and accurate simulations of large-scale circuits with ferroelectric capacitors.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2023)

Article Multidisciplinary Sciences

Efficient optimization with higher-order ising machines

Connor Bybee, Denis Kleyko, Dmitri E. Nikonov, Amir Khosrowshahi, Bruno A. Olshausen, Friedrich T. Sommer

Summary: This article introduces Ising machines as a prominent approach to solving combinatorial optimization problems on parallel hardware. The authors demonstrate that higher-order Ising machines can be more resource-efficient and provide better solutions compared to traditional second-order Ising machines.

NATURE COMMUNICATIONS (2023)

Review Nanoscience & Nanotechnology

Review of Simulation Methods for Design of Spin Logic

Dmitri E. Nikonov, Hai Li, Ian A. Young

Summary: As CMOS electronics scaling continues, active research is being conducted to explore logic devices beyond CMOS for a more energy efficient integrated circuit platform. Spintronic devices, with their non-volatility and low switching energy, are a prominent option. Simulation plays a key role in this research due to the reliance on novel materials, device structures, and circuit architecture. This paper reviews recent publications that cover different levels of the computing stack, including prevalent methods, experimental comparisons, and proposals for new logic concepts.

IEEE NANOTECHNOLOGY MAGAZINE (2023)

Proceedings Paper Computer Science, Artificial Intelligence

Integer Factorization with Compositional Distributed Representations

Denis Kleyko, Connor Bybee, Christopher Kymn, Bruno Olshausen, Amir Khosrowshahi, Dmitri E. Nikonov, Friedrich T. Sommer, Paxon Frady

Summary: This paper presents an approach to integer factorization using Vector Symbolic Architectures, and demonstrates its performance on semiprimes factorization. The method can be generalized to factorize other composite numbers and solve similar difficult problems in different domains.

PROCEEDINGS OF THE 2022 ANNUAL NEURO-INSPIRED COMPUTATIONAL ELEMENTS CONFERENCE (NICE 2022) (2022)

Article Materials Science, Multidisciplinary

First-principles Landau-like potential for BiFeO3 and related materials

Natalya S. Fedorova, Dmitri E. Nikonov, Hai Li, Ian A. Young, Jorge Iniguez

Summary: In this paper, the simplest, lowest-order Landau-like potential for BiFeO3 and La-doped BiFeO3 is introduced, which is expanded in powers of polarization, FeO6 octahedral rotations, and strains. An analytical approach is presented for computing the model parameters from density-functional theory. The potentials for BiFeO3 and La0.25Bi0.75FeO3 are computed, and it is shown that the first-principles results are accurately captured, including properties that were not considered for the calculation of the model parameters. The computed models allow the identification and explanation of the main interactions controlling the relative stability of the competing low-energy phases of these compounds.

PHYSICAL REVIEW B (2022)

Article Computer Science, Hardware & Architecture

Physics-Based Models for Magneto-Electric Spin-Orbit Logic Circuits

Hai Li, Dmitri E. Nikonov, Chia-Ching Lin, Kerem Camsari, Yu-Ching Liao, Chia-Sheng Hsu, Azad Naeemi, Ian A. Young

Summary: Spintronic devices are a promising option for beyond-CMOS devices due to their energy efficiency and compatibility with CMOS. This study presents physics-based device models for the spin-orbit coupling part of the magneto-electric spin-orbit device, as well as a more rigorous physics model for ferroelectric and magnetoelectric switching. The combined model, implemented in a SPICE circuit simulator, demonstrates the feasibility and functional operation of MESO devices.

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS (2022)

Article Engineering, Electrical & Electronic

Gaussian Random Number Generator With Reconfigurable Mean and Variance Using Stochastic Magnetic Tunnel Junctions

Punyashloka Debashis, Hai Li, Dmitri Nikonov, Ian Young

Summary: Generating high-quality random numbers with a Gaussian probability distribution is a resource-intensive task in the fields of machine learning and Monte Carlo algorithms. A new GRNG based on interconnected thermally unstable magnetic tunnel junctions is presented, which can produce multibit Gaussian random numbers at gigahertz speed and configure distributions with desired mean and variance.

IEEE MAGNETICS LETTERS (2022)

No Data Available