Journal
APPLIED PHYSICS EXPRESS
Volume 7, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.7.121303
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- Japan Society for the Promotion of Science (JSPS) through its Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)
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We demonstrate the three-dimensional imaging of threading screw dislocations (TSDs), threading edge dislocations (TEDs), and basal plane dislocations (BPDs) in 4H-SiC using two-photon-excited band-edge photoluminescence. Three-dimensional images of TSDs, TEDs, and BPDs are obtained successfully as dark contrasts on a bright background of band-edge emission. Dislocation images extending similar to 200 mu m from the surface are demonstrated. The tilt angles of TSDs and TEDs in 4H-SiC epilayers are also measured, and the mechanisms governing the line directions of TEDs and TSDs are discussed. (C) 2014 The Japan Society of Applied Physics
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