Remarkably Suppressed Luminescence Inhomogeneity in a (0001) InGaN Green Laser Structure

Nanoscopic Photoluminescence Properties of a Green-Emitting InGaN Single Quantum Well on a $\{20\bar{2}1\}$ GaN Substrate Probed by Scanning Near-Field Optical Microscopy

(2012) Akio Kaneta et al.   Applied Physics Express

Internal Quantum Efficiency and Nonradiative Recombination Rate in InGaN-Based Near-Ultraviolet Light-Emitting Diodes

(2012) Takakazu Kohno et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

(2010) Mitsuru Funato et al.   Applied Physics Express

True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power onc-Plane GaN

(2010) Adrian Avramescu et al.   Applied Physics Express

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2009) Yusuke Yoshizumi et al.   Applied Physics Express

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

510–515 nm InGaN-Based Green Laser Diodes onc-Plane GaN Substrate

(2009) Takashi Miyoshi et al.   Applied Physics Express

Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers

(2008) M. Ueda et al.   PHYSICAL REVIEW B

Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra

(2008) A. Kaneta et al.   PHYSICAL REVIEW B