Journal
APPLIED PHYSICS EXPRESS
Volume 6, Issue 4, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.7567/APEX.6.041603
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Funding
- Japan Society for the Promotion of Science (JSPS) [24560004, 22340080]
- JST, PRESTO
- JSPS
- JST
- [21224009]
- Grants-in-Aid for Scientific Research [25000003, 22340080, 24560004] Funding Source: KAKEN
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Organic interfaces of rubrene single crystals (RSCs) in ion gel-gated electric double-layer transistors (EDLTs) were investigated by electron spin resonance (ESR). The EDLTs were fabricated by laminating ion-gel films onto RSCs. Clear ESR signals due to field-injected holes in RSCs were successfully observed at low gate voltages, showing a high spin concentration due to the high capacitance of EDLTs. The analyses of anisotropic ESR signals and its gate-voltage dependence show that the bulk molecular orientation at RSCs' interfaces is preserved without forming deep trapping levels, which demonstrate that organic interfaces in RSC-EDLTs are clean and undamaged under a strong electric field in EDLTs. (C) 2013 The Japan Society of Applied Physics
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