Journal
APPLIED PHYSICS EXPRESS
Volume 5, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/APEX.5.066501
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Funding
- Defence Science and Technology Agency (DSTA), Singapore [POD0814040]
- Agency for Science, Technology and Research (A*STAR), Singapore [1021690128]
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This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal-oxide-semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain L-GD spacing of 5 mu m achieved an off-state breakdown voltage V-BR of 800 V and an on-state resistance R-on of 3 m Omega.cm(2). In addition, subthreshold swing S of similar to 97 mV/decade and I-on/I-off ratio of similar to 10(6) were obtained. Compared with those of gold-free GaN MOS-HEMTs having a gate-to-drain spacing LGD of less than 10 mu m, the VBR achieved in this work is the highest. (C) 2012 The Japan Society of Applied Physics
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