High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

Published 2011 View Full Article

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Title
High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
Authors
Keywords
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Journal
Applied Physics Express
Volume 4, Issue 6, Pages 064201
Publisher
IOP Publishing
Online
2011-06-04
DOI
10.1143/apex.4.064201
References
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