Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K

Published 2009 View Full Article

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Title
Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K
Authors
Keywords
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Journal
Applied Physics Express
Volume 2, Issue 9, Pages 095002
Publisher
IOP Publishing
Online
2009-08-21
DOI
10.1143/apex.2.095002

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